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Fairchild Semiconductor Electronic Components Datasheet

MPSA56 Datasheet

PNP General Purpose Amplifier

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MPSA56 pdf
Discrete POWER & Signal
Technologies
MPSA56
MMBTA56
PZTA56
C
BE
TO-92
C
SOT-23
Mark: 2G
E
B
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
4.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA56 *MMBTA56
PD Total Device Dissipation
Derate above 25°C
625 350
5.0 2.8
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA Thermal Resistance, Junction to Ambient 200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA56
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

MPSA56 Datasheet

PNP General Purpose Amplifier

No Preview Available !

MPSA56 pdf
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEO Collector-Cutoff Current
ICBO Collector-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
80 V
80 V
4.0 V
0.1 µA
0.1 µA
100
100
0.25
1.2
V
V
50 MHz
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p
Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
300
VCE = 1V
250
125 °C
200
150 25 °C
100 - 40 ºC
50
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
P3
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.6
0.4
0.2
0
10
- 40 ºC
25 °C
125 °C
100
I C - COLLECTOR CURRENT (mA)


Part Number MPSA56
Description PNP General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 4 Pages
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