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NZT902 NPN Low Saturation Transistor
September 2006
NZT902
NPN Low Saturation Transistor
4
tm
• These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
3 2 1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
VCEO VCBO VEBO IC TJ TSTG
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range - Continuous
Value
90 120 5 3 150 - 55 ~ +150
Units
V V V A °C °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C.