NZT45C11 Datasheet | Fairchild Semiconductor

D45C11 / NZT45C11 D45C11 TO-220 SOT-223 PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. See NZT751 for characteristics. Absolute Maximum Ratings- Symbol VCEO IC TJ, Tstg TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 80 4.0 -55 to +150 Units V A °C - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45C11 60 480 2.1 62.5 Max - NZT45C11 1.2 9.7 103 Units W m W/°C °C/W °C/W - Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . © 1997 Fairchild Semiconductor Corporation D45C11 / NZT45C11 PNP Current Driver (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test...