NZT45H8 Datasheet | Fairchild Semiconductor

Description This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from process 5Q. B CE TO-220 Figure 1. D45H8 Device Package Ordering Information Part Number D45H8 Marking D45H8 45H8 SOT-223 Figure 2. NZT45H8 Device Package Package TO-220 3L SOT-223 4L Packing Method Rail Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the remended operating conditions and stressing the parts to these levels is not remended. In addition, extended exposure to stresses above the remended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range -60 -8 -55 to +150 °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2 .fairchildsemi. D45H8 / NZT45H8 - PNP Power Amplifier Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol Parameter...