NZT605 - NPN Darlington Transistor

Datasheet Details

Part number	NZT605
Manufacturer	Fairchild Semiconductor (now onsemi)
File Size	90.95 KB
Description	NPN Darlington Transistor
Datasheet	NZT605 Datasheet
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NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T Symbol VCEO VCBO VEBO www.DataSheet4U.com C = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Value 110 140 10 1.5 -55 to +150 Units V V V A °C IC TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1.

Published: Jun 12, 2007 |