NZT605 Description
NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Emitter Ratings T Symbol VCEO VCBO VEBO .. C = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Value 110 140 10 1.5 -55 to...