NZT605 Datasheet | Fairchild Semiconductor

NZT605 NPN Darlington Transistor January 2007 NPN Darlington Transistor - This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. - Sourced from process 06. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings - T Symbol VCEO VCBO VEBO .. = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Value 110 140 10 1.5 -55 to +150 Units V V V A °C IC TJ, TSTG Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics - Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO h FE TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage - Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cut-off Current Conditions IC = 10m A, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 120V, IE = 0 VCE = 120V, IE = 0 VEB = 8.0V, IC = 0 VCE = 5.0V, IC = 50m A VCE = 5.0V, IC = 500m A VCE = 5.0V, IC = 1.0A VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A IC = 250m A, IB = 0.25m A IC = 1.0A, IB = 1.0m A IC = 1.0A, IB = 1.0m A IC = 1.0A, VCE = 5.0V IC = 100m A, VCE = 10V, f = 20MHz Min. 110 140...