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NZT651
Discrete POWER & Signal Technologies
NZT651
C
E C B
SOT-223
NPN Current Driver Transistor
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60 80 5.0 4.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.