NZT651 Datasheet | Fairchild Semiconductor

Discrete POWER & Signal Technologies SOT-223 NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 60 80 5.0 4.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max - NZT651 1.2 9.7 103 Units W m W/ °C °C/W - Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. © 1997 Fairchild Semiconductor Corporation NPN Current Driver Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 m A, IB = 0 I C = 100 µA, I E = 0 I E = 100 µ A, IC = 0 VCB = 80 V, IE = 0 VEB = 4.0 V, IC = 0 60 80 5.0 100 0.1 V V V n A...