NZT660 Datasheet | Fairchild Semiconductor

NZT660/NZT660A July 1998 NZT660 / NZT660A SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted NZT660/NZT660A 60 80 5 3 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic NZT660/NZT660A PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W °C/W Units © 1998 Fairchild Semiconductor Corporation Nzt660.lwp Pr PA 7/10/98 rev C NZT660/NZT660A PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 m A IC = 100 µA IE = 100 µA VCB = 30 V VCB = 30 V, TA=100°C IEBO Emitter Cutoff Current VEB = 4V 60 80 5 100 10 100 V V V n A u A n A ON CHARACTERISTICS- h FE DC Current Gain IC = 100 m A, VCE = 2 V IC = 500 m A, VCE = 2 V NZT660 NZT660A IC = 1 A, VCE = 2 V IC = 3 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 m A IC = 3 A, IB = 300 m A VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 m A IC = 1 A, VCE = 2 V NZT660 NZT660A 70 100 250 80 25 300 550 500 1.25 1 V V m V...