datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

RFP12N06RLE Datasheet

17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

No Preview Available !

RFP12N06RLE pdf
Data Sheet
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
January 2002
17A, 60V, 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
RFD12N06RLE
RFD12N06RLESM
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Symbol
RFP12N06RLE
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.063Ω, VGS = 10V
- rDS(ON) = 0.071Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD12N06RLE
TO-251AA
12N6LE
RFD12N06RLESM TO-252AA
12N6LE
RFP12N06RLE
TO-220AB
12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, i.e. RFD12N06RLESM9A.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC=
(TC=
25oC,
25oC,
VGS
VGS
=
=
5V) . . . . . . .
10V) (Figure
..
2)
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
ID
ID
Continuous (TC= 135oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC= 135oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
17
18
8
8
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTE:
49
0.327
-55 to 175
300
260
W
W/oC
oC
oC
oC
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B


Fairchild Semiconductor Electronic Components Datasheet

RFP12N06RLE Datasheet

17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

No Preview Available !

RFP12N06RLE pdf
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
ID = 250µA, VGS = 0V , TC = -40oC (Figure 12)
VDS = 55V, VGS = 0V
VDS = 50V, VGS = 0V, TC = 150oC
VGS = ±16V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 18A, VGS = 10V (Figures 9, 10)
ID = 8A, VGS = 5V (Figure 9)
ID = 8A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-251AA, TO-252AA
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 30V, ID = 8A
VGS = 4.5V, RGS = 22
(Figures 15, 21, 22)
VDD = 30V, ID = 18A
VGS = 10V,
RGS = 24
(Figures 16, 21, 22)
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 30V,
ID = 8A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
VSD
Reverse Recovery Time
Reverse Recovered Charge
trr
QRR
TEST CONDITIONS
ISD = 8A
ISD = 4A
ISD = 8A, dISD/dt = 100A/µs
ISD = 8A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
60 - - V
55 - - V
- - 1 µA
- - 250 µA
- - ±100 nA
1 - 3V
-
0.052 0.063
-
0.060 0.071
-
0.064 0.075
- - 3.06 oC/W
- - 100 oC/W
- - 153 ns
- 13 - ns
- 89 - ns
- 22 - ns
- 37 - ns
- - 89 ns
- - 59 ns
- 5.3 - ns
- 34 - ns
- 41 - ns
- 50 - ns
- - 136 ns
- 12 15 nC
- 6.8 8.2 nC
-
0.54 0.65
nC
- 1.7 - nC
- 3 - nC
- 485 -
- 130 -
- 28 -
pF
pF
pF
MIN TYP MAX UNITS
-
-
1.25
V
- - 1.0 V
- - 70 ns
- - 165 nC
©2002 Fairchild Semiconductor Corporation
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B


Part Number RFP12N06RLE
Description 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
PDF Download
RFP12N06RLE pdf
RFP12N06RLE Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 RFP12N06RLE 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor
RFP12N06RLE pdf
2 RFP12N06RLE 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs Intersil Corporation
Intersil Corporation
RFP12N06RLE pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy