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Intersil Electronic Components Datasheet

RFP12N18 Datasheet

12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs

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RFP12N18 pdf
Semiconductor
September 1998
RFM12N18, RFM12N20,
RFP12N18, RFP12N20
12A, 180V and 200V, 0.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N
20)
/Subject
(12A,
180V
and
200V,
0.250
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
Features
• 12A, 180V and 200V
• rDS(ON) = 0.250
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM12N18
TO-204AA
RFM12N18
RFM12N20
TO-204AA
RFM12N20
RFP12N18
TO-220AB
RFP12N18
RFP12N20
TO-220AB
RFP12N20
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09293.
Symbol
D
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1461.2


Intersil Electronic Components Datasheet

RFP12N18 Datasheet

12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP12N18 pdf
RFM12N18, RFM12N20, RFP12N18, RFP12N20
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM12N18 RFM12N20 RFP12N18 RFP12N20 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1m) (Note 1). . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg
180
180
12
30
±20
100
0.8
-55 to 150
300
260
200
200
12
30
±20
100
0.8
-55 to 150
300
260
180
180
12
30
±20
75
0.6
-55 to 150
300
260
200
200
12
30
±20
75
0.6
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM12N18, RFP12N18
BVDSS ID = 250µA, VGS = 0V
RFM12N20, RFP12N20
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
IDSS VDS = Rated BVDSS, VGS = 0V
VTCDS==1205.8oCx Rated BVDSS, VGS = 0V,
IGSS VGS = ±20V, VDS = 0V
rDS(ON) ID = 12A, VGS = 10V, (Figures 6, 7)
VDS(ON) ID = 12A, VGS = 10V
td(ON)
tr
td(OFF)
VDD = 100V, ID 6A, RG = 50,
RL = 16.5, VGS = 10V,
(Figures 10, 11, 12)
tf
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz,
(Figure 9)
CRSS
RθJC RFM12N18, RFM12N20
RFP12N18, RFP12N20
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 6A
Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTE:
2. Pulsed: pulse width 300µs maximum, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
180 -
200 -
2-
--
--
-V
-V
4V
1 µA
25 µA
- - ±100 nA
- - 0.250
- - 3.0 V
- 35 50 ns
- 130 200 ns
- 120 180 ns
- 105 160 ns
- - 1700 pF
- - 600 pF
- - 300 pF
- - 1.25 oC/W
- - 1.67 oC/W
MIN TYP MAX UNITS
- - 1.4 V
- 325 -
ns
5-2


Part Number RFP12N18
Description 12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
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RFP12N18 pdf
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