Datasheet4U Logo Datasheet4U.com

SSH45N20A Datasheet - Fairchild Semiconductor

Advanced Power MOSFET

SSH45N20A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ.) SSH45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 45 A TO-3P 1 2 3 1.Gate 2. Drain 3. Sour

SSH45N20A Datasheet (292.78 KB)

Preview of SSH45N20A PDF

Datasheet Details

Part number:

SSH45N20A

Manufacturer:

Fairchild Semiconductor

File Size:

292.78 KB

Description:

Advanced power mosfet.

📁 Related Datasheet

SSH45N20B 200V N-Channel MOSFET (Fairchild Semiconductor)

SSH40N15 N-CHANNEL POWER MOSFET (Samsung semiconductor)

SSH40N20 N-CHANNEL POWER MOSFET (Samsung semiconductor)

SSH4N70 (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS (Samsung semiconductor)

SSH4N80 (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS (Samsung semiconductor)

SSH10N60A advanced power MOSFET (Fairchild)

SSH10N60B 600V N-Channel MOSFET (Fairchild)

SSH10N70 N-Channel Power MOSFET (Samsung)

SSH10N80 (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)

SSH10N80A Advanced Power MOSFET (Samsung)

TAGS

SSH45N20A Advanced Power MOSFET Fairchild Semiconductor

Image Gallery

SSH45N20A Datasheet Preview Page 2 SSH45N20A Datasheet Preview Page 3

SSH45N20A Distributor