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SSH7N60B - 600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 7.3A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
  • Low gate charge ( typical 38 nC).
  • Low Crss ( typical 23 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability G DS TO-3P SSH Series G! D ! ! #" ! ! ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current -.

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Full PDF Text Transcription

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SSH7N60B November 2001 SSH7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • 7.3A, 600V, RDS(on) = 1.
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