SSH7N60B Datasheet | Fairchild Semiconductor

November 2001 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies. Features - 7.3A, 600V, RDS(on) = 1.2Ω @VGS = 10 V - Low gate charge ( typical 38 nC) - Low Crss ( typical 23 pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability G DS TO-3P SSH...