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SSH9N80A - Advanced Power MOSFET

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com SSH9N80A BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A TO-3P Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 1.000 Ω (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Curren.

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Full PDF Text Transcription for SSH9N80A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSH9N80A. For precise diagrams, and layout, please refer to the original PDF.

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSH9N80A BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A TO-3P Lower In...

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t4U.com SSH9N80A BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A TO-3P Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3.

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