SSI2N60B Datasheet - Fairchild Semiconductor

N-Channel MOSFET

SSI2N60B Features

* 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D2-PAK SSW Series G D S I2-PAK SSI

SSI2N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSI2N60B Datasheet (673.79 KB)

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Datasheet Details

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SSI2N60B

Manufacturer:

Fairchild Semiconductor

File Size:

673.79 KB

Description:

N-channel mosfet.

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SSI2N60B N-Channel MOSFET Fairchild Semiconductor

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SSI2N60B Features

SSI2N60B General Description

Datasheet Details

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Description:

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