SSI1N60B Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSI1N60B Key Features
- 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% a