SSI1N60A Datasheet | Fairchild Semiconductor

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology .. SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 o C ) - Total Power Dissipation (TC=25 C ) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o o o Value 600 1 0.6 1 O Units V A A V m J A m J V/ns W W W/ C o 3 + _ 30 44 1 3.4 3.0 3.1 34 0.27 - 55 to +150 O 1 O 1 O 3 O 2 o Thermal Resistance Symbol R θJC R θ JA R θ JA Characteristic Junction-to-Case Junction-to-Ambient - Junction-to-Ambient Typ. ---Max. 3.67 40 62.5 o Units C /W - When mounted on the minimum pad size remended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation SSW/I1N60A Symbol BVDSS ∆BV/∆TJ VGS(th) .. N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 o C unless otherwise specified) Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( “Miller” ) Charge Min. Typ. Max. Units 600 -2.0 -----------------0.74 ------0.83 145 20 7 10 13 28 13 7.5 1.2 4 --4.0 100 -100 25...