SSI1N60A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSI1N60A
Manufacturer	Fairchild Semiconductor
File Size	279.83 KB
Description	Advanced Power MOSFET
Datasheet	SSI1N60A Datasheet
Additional preview pages of the SSI1N60A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) 1 I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain C.

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Published: Aug 19, 2008 |