Part number:
SSP10N60A
Manufacturer:
Fairchild Semiconductor
File Size:
639.49 KB
Description:
Advanced power mosfet.
SSP10N60A Datasheet (639.49 KB)
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source
SSP10N60A Datasheet (639.49 KB)
SSP10N60A
Fairchild Semiconductor
639.49 KB
Advanced power mosfet.
📁 Related Datasheet
SSP10N60B 600V N-Channel MOSFET (Fairchild Semiconductor)
SSP100 (SSP80 / SSP100) Surround Sound Processor Manual (HALCRO)
SSP11N60C2 Power Transistor (infineon)
SSP1601 DSP (Samsung Electronics)
SSP1837 Single Phase Energy Meter IC (Siproin)
SSP1N50A Advanced Power MOSFET (Samsung Electronics)
SSP1N60B N-Channel MOSFET (Fairchild Semiconductor)
SSP-T Surface Mount Quartz Crystal (ETC)
SSP-T5 Surface Mount Quartz Crystal (ETC)
SSP-T7-F SMD Quartz Crystal (Seiko)
