Datasheet Summary
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.)
1 2 3
BVDSS = 800 V RDS(on) = 1.8 Ω ID = 7 A
TO-220
1.Gate 2. Drain 3....