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Si9936DY - Dual N-Channel MOSFET

General Description

These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • • 5.0 A, 30 V. RDS(ON) = 0.050 Ω @ VGS = 10 V RDS(ON) = 0.080 Ω @ VGS = 4.5 V • Low gate charge. • Fast switching speed. • High power and current handling capability. ' ' ' '   62.
  •  6.
  •  6 $.

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Part Number Description
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Full PDF Text Transcription (Reference)

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Si9936DY June 1999 Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • Battery switch • Load switch • Motor controls Features • 5.0 A, 30 V. RDS(ON) = 0.050 Ω @ VGS = 10 V RDS(ON) = 0.080 Ω @ VGS = 4.5 V • Low gate charge. • Fast switching speed. • High power and current handling capability.