FPD6836P70 Key Features
- 22 dBm Output Power (P1dB)
- 15 dB Power Gain (G1dB) at 5.8 GHz
- 0.8 dB Noise Figure at 5.8 GHz
- 32 dBm Output IP3 at 5.8 GHz
- 45% Power-Added Efficiency at 5.8 GHz
- Useable Gain to 18 GHz
- Part: FPD6836P70
- Manufacturer: Filtronic
- Size: 248.34 KB
Other FPD6836P70 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
| Compound Photonics Compound Photonics |
FPD6836P70 | Low-Noise High-Frequency Packaged pHEMT |
RF Micro Devices |
FPD6836P70 | LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT |
FPD6836P70 Description
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications. Gain blocks and medium power stages WiMax (2-11GHz) WLAN 802.11a (5.8GHz) Point-to-Point Radio (to 18GHz) ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL Power at 1dB Gain pression P1dB Small Signal Gain SSG Power-Added Efficiency PAE...