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LP1500SOT89 Datasheet - Filtronic Compound Semiconductors

LP1500SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate s.

LP1500SOT89_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LP1500SOT89

Manufacturer:

Filtronic Compound Semiconductors

File Size:

44.12 KB

Description:

Low noise/ high linearity packaged phemt.

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LP1500SOT89 LP1500SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

LP1500SOT89 Distributor