LP1500SOT223 Datasheet (Filtronic Compound Semiconductors) - Low Noise/ High Linearity Packaged PHEMT

LP1500SOT223 Description

AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimi

LP1500SOT223 Features

* LP1500SOT223 Low Noise, High Linearity Packaged PHEMT

* +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP V

LP1500SOT223, Low Noise/ High Linearity Packaged PHEMT - Filtronic Compound Semiconductors

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LP1500SOT223 Description