LP1500SOT89 Datasheet - Filtronic Compound Semiconductors

LP1500SOT89, LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * .
AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobilit.

LP1500SOT89_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LP1500SOT89

Manufacturer:

Filtronic Compound Semiconductors

File Size:

44.12 KB

Description:

LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Features

* 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz
* 17 dB Power Gain at 1.8 GHz
* 1.0 dB Noise Figure
* 44 dBm Output IP3 at 1.8 GHz
* 50% Power-Added Efficiency

Applications

* The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimize

LP1500SOT89 Distributors

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LP1500SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LP1500SOT89-like datasheet