Datasheet Details
- Part number
- LP1500SOT2231
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 69.84 KB
- Datasheet
- LP1500SOT2231_FiltronicCompoundSemiconductors.pdf
- Description
- Low Noise/ High Linearity Packaged PHEMT
LP1500SOT2231 Description
Filtronic Solid State .
AND APPLICATIONS
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobili.
LP1500SOT2231 Features
* LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
* +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range
GATE
SOURCE
SOURCE
DRAIN
(TOP V
LP1500SOT2231 Applications
* The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gat
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