LP1500SOT223 - Low Noise/ High Linearity Packaged PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP1500SOT223
Manufacturer	Filtronic Compound Semiconductors
File Size	69.84 KB
Description	Low Noise/ High Linearity Packaged PHEMT
Datasheet	LP1500SOT223 Datasheet
Additional preview pages of the LP1500SOT223 datasheet.

Product details

Description

AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP1500 also

Features

LP1500SOT223 Low Noise, High Linearity Packaged PHEMT.
+27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP VIEW).

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Published: Mar 22, 2005 |