LP1500P100 Datasheet - Filtronic Compound Semiconductors

LP1500P100, PACKAGED 1W POWER PHEMT

PACKAGED 1W POWER PHEMT * .
AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

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Datasheet Details

Part number:

LP1500P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

48.47 KB

Description:

PACKAGED 1W POWER PHEMT

Features

* 31 dBm Output Power at 1-dB Compression at 15 GHz
* 9 dB Power Gain at 15 GHz
* 42 dBm Output IP3 at 15GHz
* 60% Power-Added Efficiency LP1500P100

Applications

* The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimiz

LP1500P100 Distributors

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LP1500P100 PACKAGED POWER PHEMT Filtronic Compound Semiconductors

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