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LP1500P100 Datasheet - Filtronic Compound Semiconductors

LP1500P100 - PACKAGED 1W POWER PHEMT

AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography.

The recessed “mushroom” gate

LP1500P100_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LP1500P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

48.47 KB

Description:

Packaged 1w power phemt.

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