LP1500P100 - PACKAGED 1W POWER PHEMT
AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate
