Datasheet4U Logo Datasheet4U.com

LP1500P100 - PACKAGED 1W POWER PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography.

Features

  • S.
  • 31 dBm Output Power at 1-dB Compression at 15 GHz.
  • 9 dB Power Gain at 15 GHz.
  • 42 dBm Output IP3 at 15GHz.
  • 60% Power-Added Efficiency LP1500P100.

📥 Download Datasheet

Datasheet preview – LP1500P100

Datasheet Details

Part number LP1500P100
Manufacturer Filtronic Compound Semiconductors
File Size 48.47 KB
Description PACKAGED 1W POWER PHEMT
Datasheet download datasheet LP1500P100 Datasheet
Additional preview pages of the LP1500P100 datasheet.

📁 Similar Datasheet

Other Datasheets by Filtronic Compound Semiconductors

Full PDF Text Transcription

Click to expand full text
PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency LP1500P100 • DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3N4 passivation and is available in die form or in other packages.
Published: |