Datasheet Details
- Part number
- LP1500P100
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 48.47 KB
- Datasheet
- LP1500P100_FiltronicCompoundSemiconductors.pdf
- Description
- PACKAGED 1W POWER PHEMT
LP1500P100 Description
PACKAGED 1W POWER PHEMT * .
AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.
LP1500P100 Features
* 31 dBm Output Power at 1-dB Compression at 15 GHz
* 9 dB Power Gain at 15 GHz
* 42 dBm Output IP3 at 15GHz
* 60% Power-Added Efficiency
LP1500P100
LP1500P100 Applications
* The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimiz
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