LP1500 - 1W POWER PHEMT
AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct
LP1500 Features
* 31.5 dBm Output Power at 1-dB Compression at 18 GHz
* 8 dB Power Gain at 18 GHz
* 28 dBm Output Power at 1-dB Compression at 3.3V
* 45dBm Output IP3 at 18GHz
* 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) LP1500
