Datasheet4U Logo Datasheet4U.com

LP1500 - 1W POWER PHEMT

Datasheet Summary

Description

AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct

Features

  • S.
  • 31.5 dBm Output Power at 1-dB Compression at 18 GHz.
  • 8 dB Power Gain at 18 GHz.
  • 28 dBm Output Power at 1-dB Compression at 3.3V.
  • 45dBm Output IP3 at 18GHz.
  • 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) LP1500.

📥 Download Datasheet

Datasheet preview – LP1500

Datasheet Details

Part number LP1500
Manufacturer Filtronic Compound Semiconductors
File Size 40.32 KB
Description 1W POWER PHEMT
Datasheet download datasheet LP1500 Datasheet
Additional preview pages of the LP1500 datasheet.

📁 Similar Datasheet

Other Datasheets by Filtronic Compound Semiconductors

Full PDF Text Transcription

Click to expand full text
1W POWER PHEMT • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) LP1500 • DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 1500 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
Published: |