LP1500 - 1W POWER PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP1500
Manufacturer	Filtronic Compound Semiconductors
File Size	40.32 KB
Description	1W POWER PHEMT
Datasheet	LP1500 Datasheet
Additional preview pages of the LP1500 datasheet.

Product details

Description

AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 1500 µ m Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimize

Features

S.
31.5 dBm Output Power at 1-dB Compression at 18 GHz.
8 dB Power Gain at 18 GHz.
28 dBm Output Power at 1-dB Compression at 3.3V.
45dBm Output IP3 at 18GHz.
50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) LP1500.

📁 Similar Datasheet

LP1503VR - Surface finishing Metal and Wood (FLEX)
LP150E02-A2P1 - Liquid Crystal Display (LG)
LP150E05-A2K1 - SXGA+ TFT LCD (LG)
LP150E06-A3K2 - Liquid Crystal Display (LG)
LP150E06-A3K4 - SXGA+ TFT LCD (LG)
LP150E06-B3K3 - TFT LCD (LG)
LP150E07-A2 - Liquid Crystal Display (LG)
LP150E07-A3K1 - Liquid Crystal Display (LG)

Other Datasheets by Filtronic Compound Semiconductors

LP1500P100 - PACKAGED 1W POWER PHEMT
LP1500SOT223 - Low Noise/ High Linearity Packaged PHEMT
LP1500SOT2231 - Low Noise/ High Linearity Packaged PHEMT
LP1500SOT2232 - Low Noise/ High Linearity Packaged PHEMT
LP1500SOT2233 - Low Noise/ High Linearity Packaged PHEMT
LP1500SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Published: Mar 22, 2005 |