Datasheet Details
- Part number
- LP1500
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 40.32 KB
- Datasheet
- LP1500_FiltronicCompoundSemiconductors.pdf
- Description
- 1W POWER PHEMT
LP1500 Description
1W POWER PHEMT * .
AND APPLICATIONS
DIE SIZE: 16.
LP1500 Features
* 31.5 dBm Output Power at 1-dB Compression at 18 GHz
* 8 dB Power Gain at 18 GHz
* 28 dBm Output Power at 1-dB Compression at 3.3V
* 45dBm Output IP3 at 18GHz
* 50% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X)
LP1500
LP1500 Applications
* DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by
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