LP1500 Datasheet - Filtronic Compound Semiconductors

LP1500 1W POWER PHEMT

AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct.

LP1500 Features

* 31.5 dBm Output Power at 1-dB Compression at 18 GHz

* 8 dB Power Gain at 18 GHz

* 28 dBm Output Power at 1-dB Compression at 3.3V

* 45dBm Output IP3 at 18GHz

* 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) LP1500

LP1500_FiltronicCompoundSemiconductors.pdf

LP1500 Datasheet Preview — Preview of LP1500 PDF

Datasheet Details

Part number:

LP1500

Manufacturer:

Filtronic Compound Semiconductors

File Size:

40.32 KB

Description:

1w power phemt.

LP1500 Distributor

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LP1500 LP1500 POWER PHEMT Filtronic Compound Semiconductors