LP6836P100 Datasheet, Filtronic Compound Semiconductors

LP6836P100 Packaged 0.25W Power PHEMT
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* GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Dist.

The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Elec.