LPS200 phemt equivalent, high performance low noise phemt.
* 1.0 dB Noise Figure at 18 GHz
* 10 dB Associated Gain at 18 GHz
* Low DC Power Consumption
LPS200
GATE BOND PAD (2X) SOURCE BOND PAD (2x)
DRAIN BOND PAD .
The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobilit.
AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recesse.
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