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LPS200P70 Datasheet - Filtronic Compound Semiconductors

LPS200P70 PACKAGED LOW NOISE PHEMT

AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure.

LPS200P70_FiltronicCompoundSemiconductors.pdf