FTK1N60I mosfet equivalent, n-channel mosfet.
* RDS(ON) = 9 .6Ω@VGS =10V * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.5 pF) * Fast switching capability * Avalanche ener.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 9 .6.
The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp.
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