AO8801 Datasheet Dual P-Channel FET

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	AO8801
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	373.38 KB
Description	Dual P-Channel FET
Download	AO8801 Download (PDF)

The AO8801 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor.

VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4.7 -3.7 -30 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C.

Part Number	Description	Manufacturer
AO8801	Dual P-Channel MOSFET	VBsemi
AO8801	Dual P-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors
AO8801A	20V P-Channel MOSFET	Alpha & Omega Semiconductors