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AO8801A Datasheet 20v P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO8801A 20V P-Channel MOSFET General.

General Description

Product Summary The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD Protected -20V -4.5A < 42mΩ < 54mΩ < 68mΩ TSSOP8 Top View Bottom View Pin 1 Top View D1 1 8 D2 S1 2 7 S2 G1 S1 3 6 S2 G1 4 5 G2 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -4.5 -3.6 -30 1.5 0.96 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 63 101 Maximum Junction-to-Lead Steady-State RθJL 64 Max 83 130 83 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 1: Sep 2011 .aosmd.

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