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AO8801A - P-Channel MOSFET

Datasheet Summary

Description

The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4.5A < 42mΩ < 54mΩ < 68mΩ D1 D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±8 -4.5 -3.6 -30 1.5 0.96 -55 to 150 Units V V A VGS TA=25° C C TA=70° TA=25° C C TA=70° ID IDM PD.

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Datasheet Details

Part number AO8801A
Manufacturer FreesCale
File Size 339.63 KB
Description P-Channel MOSFET
Datasheet download datasheet AO8801A Datasheet
Additional preview pages of the AO8801A datasheet.

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Full PDF Text Transcription

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AO8801A 20V P-Channel MOSFET General Description The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4.5A < 42mΩ < 54mΩ < 68mΩ D1 D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±8 -4.5 -3.6 -30 1.5 0.
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