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AO8801-VB
AO8801-VB Datasheet
Dual P-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) (Ω) 0.036 at V GS = - 10 V 0.055 at VGS = - 4.5 V
ID (A) - 5.2 - 4.2
FEATURES • Halogen-free • TrenchFET® Power MOSFETs
APPLICATIONS • Load Switch • Battery Switch
RoHS
COMPLIANT
S1
S2
D1 1 S1 2 S1 3 G1 4
TSSOP-8 Top View
8 D2 7 S2 6 S2 5 G2
G1
G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width)
TA = 25 °C TA = 70 °C
ID
IDM
- 5.2
- 4.1
- 4.2
- 3.6
- 30
A
Continuous Source Current (Diode Conduction)a
IS
- 1.