VBsemi Electronics AO8801
Dual P-Channel MOSFET
| Part No. | AO8801 |
|---|---|
| Datasheet | AO8801 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free● TrenchFET® Power MOSFETs
APPLICATIONS
● Load Switch● Battery Switch RoHS COMPLIANT S1 S2 D1 1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8 D2 7 S2 6 S2 5 G2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 30 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) TA = 25 °C TA = 70 °C ID IDM - 5.2 - 4.1 - 4.2 - 3.6 - 30 A Continuous Source Current (Diode Conduction)a IS - 1.0 - 0.70 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.14 0.83 0.73 0.53 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 86 124 52 Maximum 110 150 65 Unit °C/W MMJSRRJUTUU 1 AO8801-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min.
