MML09212HT1 Datasheet Enhancement Mode pHEMT

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MML09212HT1 enhancement mode phemt by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MML09212HT1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	771.44 KB
Description	Enhancement Mode pHEMT
Download	MML09212HT1 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MML09212H Rev.

2, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML09212H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.

It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits.

Key Features

Low Noise Figure: 0.52 dB @ 900 MHz.
Frequency: 400--1400 MHz.
Unconditionally Stable Over Temperature.
High Reverse Isolation: --58 dB @ 900 MHz.
P1dB: 22.8 dBm @ 900 MHz.
Small--Signal Gain: 37.5 dB @ 900 MHz.
Third Order Output Intercept Point: 37.5 dBm @ 900 MHz.
Active Bias Control (On--chip).
Single 5 V Supply.
Supply Current: 150 mA.
50 Ohm Operation (some external matching required).
Cost--effective 12--pin, 3 mm QFN Surface Mo.

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