MML09212HT1 Description
Freescale Semiconductor Technical Data Document Number: 2, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML09212H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver...
MML09212HT1 Key Features
- Low Noise Figure: 0.52 dB @ 900 MHz
- Frequency: 400--1400 MHz
- Unconditionally Stable Over Temperature
- High Reverse Isolation: --58 dB @ 900 MHz
- P1dB: 22.8 dBm @ 900 MHz
- Small--Signal Gain: 37.5 dB @ 900 MHz
- Third Order Output Intercept Point: 37.5 dBm @ 900 MHz
- Active Bias Control (On--chip)
- Single 5 V Supply
- Supply Current: 150 mA