MML20211HT1 Datasheet Enhancement Mode pHEMT

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MML20211HT1 enhancement mode phemt by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MML20211HT1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	497.72 KB
Description	Enhancement Mode pHEMT
Download	MML20211HT1 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MML20211H Rev.

1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML20211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.

It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits.

Key Features

Ultra Low Noise Figure: 0.65 dB @ 2140 MHz.
Frequency: 1400--2800 MHz.
High Reverse Isolation: --35 dB @ 2140 MHz.
P1dB: 21.3 dBm @ 2140 MHz.
Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally).
Third Order Output Intercept Point: 33 dBm @ 2140 MHz.
Active Bias Control (adjustable externally).
Single 5 V Supply.
Supply Current: 60 mA.
50 Ohm Operation (some external matching required).
Cost--effective 8--pin, 2 mm DFN Surface Mou.

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