MML20211HT1 Description
Freescale Semiconductor Technical Data Document Number: 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML20211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver...
MML20211HT1 Key Features
- Ultra Low Noise Figure: 0.65 dB @ 2140 MHz
- Frequency: 1400--2800 MHz
- High Reverse Isolation: --35 dB @ 2140 MHz
- P1dB: 21.3 dBm @ 2140 MHz
- Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)
- Third Order Output Intercept Point: 33 dBm @ 2140 MHz
- Active Bias Control (adjustable externally)
- Single 5 V Supply
- Supply Current: 60 mA
- 50 Ohm Operation (some external matching required)