MRF19060LSR3 Description
Freescale Semiconductor Technical Data Document Number: 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications.
MRF19060LSR3 Key Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel