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Freescale Semiconductor Electronic Components Datasheet

MRF19125R3 Datasheet

RF Power Field Effect Transistors

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MRF19125R3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
wwNw.-DCatahShaeent4nUe.col mEnhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts,
IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR — - 51 dB
IM3 — - 37.0 dBc
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF19125
Rev. 6, 4/2006
MRF19125R3
MRF19125SR3
1930- 1990 MHz, 125 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF191225R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF19125SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
330
1.89
- 65 to +150
150
200
Value
0.53
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF19125R3 MRF19125SR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF19125R3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF19125R3 pdf
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Dwrawinw-.DSoautarSceheBeret4aUk.dcoowmn Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
V(BR)DSS
65
IGSS
1
IDSS
10
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1300 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
gfs
VGS(th)
VGS(Q)
VDS(on)
2
2.5
9
3.9
0.185
4
4.5
0.21
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss — 5.4 —
Functional Tests (In Freescale Test Fixture) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps 12 13.5 —
Drain Efficiency
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η 19 22 —
Intermodulation Distortion
IM3 — - 37 - 35
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz)
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz)
ACPR
- 51 - 47
Input Return Loss
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL — - 13 - 9
1. Part is internally matched both on input and output.
Unit
Vdc
μAdc
μAdc
S
Vdc
Vdc
Vdc
pF
dB
%
dBc
dBc
dB
(continued)
MRF19125R3 MRF19125SR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF19125R3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 12 Pages
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