MRF19125R3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF19125R3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF19125R3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	454.81 KB
Description	RF Power Field Effect Transistors
Download	MRF19125R3 Download (PDF)

Overview

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF19125 Rev.

6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

Key Features

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19125R3 MRF19125SR3 1930- 1990 MHz, 125 W, 26 V.

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