Datasheet4U Logo Datasheet4U.com

MRF21125SR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF21125SR3, a member of the MRF21125R3 RF Power Field Effect Transistors family.

Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.

📥 Download Datasheet

Datasheet preview – MRF21125SR3

Datasheet Details

Part number MRF21125SR3
Manufacturer Freescale Semiconductor
File Size 465.60 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF21125SR3 Datasheet
Additional preview pages of the MRF21125SR3 datasheet.

📁 Similar Datasheet

  • MRF21125SR3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
  • MRF21125S - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
  • MRF21125 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
  • MRF21120 - RF POWER FIELD EFFECT TRANSISTOR (Motorola)
  • MRF21180R6 - RF Power Field Effect Transistor (Motorola)
  • MRF21010LR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
  • MRF21010LSR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
  • MRF21030LR3 - RF Power Field Effect Transistors (Motorola)
  • MRF21030LSR3 - RF Power Field Effect Transistors (Motorola)
  • MRF21030R3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
Other Datasheets by Freescale Semiconductor
  • MRF21125R3 - RF Power Field Effect Transistors
  • MRF21120R6 - RF Power Field Effect Transistor
  • MRF21010LR1 - RF Power Field Effect Transistors
  • MRF21010LSR1 - RF Power Field Effect Transistors
  • MRF284LR1 - RF Power Field Effect Transistors
  • MRF284LSR1 - RF Power Field Effect Transistors
  • MRF1513NT1 - RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
  • MRF1517NT1 - RF Power Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 1600 mA, Carrier W - CDMA f1 = 2112.5 MHz, fP2e=rf2o1rm22a.n5cMe Hfozr,VCDhDa=nn2e8l bVaonltds,wIiDdQth== 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Published: |