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MRF5S19130HR3 - RF Power Field Effect Transistors

Description

Short RF Bead 0.8 pF Chip Capacitor 0.6 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor 1.7 pF Chip Capacitor 9.1 pF Chip Capacitors 1 μF, 25 V Tantalum Capacitors 47 μF, 50 V Electrolytic Capacitor 0.1 μF Chip Capacitors 1000 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF, 35 V

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 V Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19130HR3 MRF5S19130HSR3 1930- 1990 MHz, 26 W AVG. , 28 V 2 x N - CDMA LA.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13 dB Drain Efficiency — 25% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.
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