MRF5S19060MR1 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF5S19060M Rev. 5, 5/2006 RF Power Field Effect Transistors MRF5S19060MR1 MRF5S19060MBR1 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon source amplifier applications in 28 Volt base station equipment. - Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 m A, Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 14 d B Drain Efficiency - 23% IM3 @ 2.5 MHz Offset - - 37 d Bc in 1.2288 MHz Channel Bandwidth ACPR @ 885 k Hz Offset - - 51 d Bc in 30 k Hz Channel Bandwidth - Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg. Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Integrated ESD Protection - 200°C Capable Plastic Package - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. ARCHIVE INFORMATION CASE...