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MRF5S19060NR1 - RF Power Field Effect Transistors

General Description

1 μF, 35 V Tantalum Capacitor 10 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 10 μF, 35 V Tantalum Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 0.8 pF 100B Chip Capacitor 1.5 pF 100B Chip Capacitor 1.0 pF 100B Chip Capacitor 0.2 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors (120

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S19060NR1 MRF5S19060NBR1 1930 - 1990 MHz, 12 W AVG. , 28 V 2 x N - CDMA.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19060NBR1 RF Power Field Effect Transistors
MRF5S19060MBR1 RF Power Field Effect Transistors
MRF5S19060MR1 RF Power Field Effect Transistors
MRF5S19090HR3 RF Power Field Effect Transistors
MRF5S19090HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment. • Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 23% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.