MRF5S19060NR1 Overview
Freescale Semiconductor Technical Data Document Number: 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon source amplifier applications in 28 Volt base station equipment.
MRF5S19060NR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- 1990 MHz, 12 W AVG., 28 V 2 x N
- CDMA LATERAL N
MRF5S19060NR1 Applications
- signal, mon source amplifier applications in 28 Volt base station equipment