MRF5S19090HR3 Datasheet PDF - Freescale Semiconductor RF Power Field Effect Transistors Specs

MRF5S19090HR3 - RF Power Field Effect Transistors

Datasheet Summary

Description

Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.7BP 500X 44F3358 D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Newark Newark Newark Garret

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19090HR3 MRF5S19090HSR3 1930- 1990 MHz, 18 W AVG. , 28 V 2 x N - CDMA.

Datasheet Details

Part number	MRF5S19090HR3
Manufacturer	Freescale Semiconductor
File Size	445.84 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S19090HR3 Datasheet
Additional preview pages of the MRF5S19090HR3 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.8% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.

Published: Feb 26, 2007 |