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MRF5S19060NBR1 Datasheet

Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF5S19060NBR1 Overview

Freescale Semiconductor Technical Data Document Number: 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon source amplifier applications in 28 Volt base station equipment.

MRF5S19060NBR1 Key Features

  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • N Suffix Indicates Lead
  • Free Terminations. RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
  • 1990 MHz, 12 W AVG., 28 V 2 x N
  • CDMA LATERAL N

MRF5S19060NBR1 Applications

  • signal, mon source amplifier applications in 28 Volt base station equipment

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19060NR1 RF Power Field Effect Transistors
MRF5S19060MBR1 RF Power Field Effect Transistors
MRF5S19060MR1 RF Power Field Effect Transistors
MRF5S19090HR3 RF Power Field Effect Transistors
MRF5S19090HSR3 RF Power Field Effect Transistors
MRF5S19130HR3 RF Power Field Effect Transistors
MRF5S19130HSR3 RF Power Field Effect Transistors
MRF5S19150HR3 RF Power Field Effect Transistors
MRF5S19150HSR3 RF Power Field Effect Transistors
MRF5S21045 RF Power Field Effect Transistors

MRF5S19060NBR1 Distributor