MRF5S19090HSR3 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev. 2, 5/2006 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. - Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 850 m A, Pout = 18 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 14.5 d B Drain Efficiency - 25.8% IM3 @ 2.5 MHz Offset - - 37 d Bc in 1.2288 MHz Bandwidth ACPR @ 885 k Hz Offset - - 51 d B in 30 k Hz Bandwidth - Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Lower Thermal Resistance Package - Low Gold Plating Thickness on Leads, 40μ″ Nominal. - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19090HR3 MRF5S19090HSR3 1930- 1990 MHz, 18 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE...