* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 V Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness on
MRF5S19150HSR3 Datasheet (475.71 KB)
MRF5S19150HSR3
Freescale Semiconductor
475.71 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
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