MRF5S21090HSR3, MRF5S21090HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF5S21090HSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev.1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - .
9.

MRF5S21090HSR3 Features

* AVERAGE (dB)
* 20
* 30
* 40
* 50
* 60
* 70
* 80
* 90
* 100
* 110
* 120
* 25
* ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW
* IM3 @ 3.84 MHz BW
* 20
* 15
* 10
* 5 0 5 10 3.84 MHz C

MRF5S21090HSR3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, P

📥 Download Datasheet

MRF5S21090HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF5S21090HSR3, MRF5S21090HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF5S21090HSR3, MRF5S21090HR3
Manufacturer: Freescale Semiconductor
File Size: 404.04 KB
Datasheet: MRF5S21090HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF5S21090HSR3, MRF5S21090HR3.
Please refer to the document for exact specifications by model.

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