MRF5S9101NR1
Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. Ro HS pliant.
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S9101NR1 MRF5S9101NBR1
- 960 MHz, 100 W, 26 V GSM/GSM EDGE LATERAL N
- CHANNEL RF POWER MOSFETs
CASE 1486
- 03, STYLE 1 TO
- 270 WB
- 4 PLASTIC MRF5S9101NR1
CASE 1484
- 04, STYLE 1 TO
- 272 WB
- 4 PLASTIC MRF5S9101NBR1
Table 1. Maximum Ratings
Rating Drain
- Source Voltage Gate
- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value
- 0.5, +68
- 0.5, +15 427 2.44
- 65 to +150 200 Unit Vdc Vdc W W/°C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W...
