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Freescale Semiconductor Electronic Components Datasheet

MRF5S9101NR1 Datasheet

GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
T10yp0icWaal GttsSCMWP,eFrfuollrmFraenqcuee:nVcDyDB=an2d6 (V8o6l9ts-,8I9D4Q M= H70z0anmdA9, 2P1o-u9t =60 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%
GSM EDGE Application
5T0ypWicaatltGs SAMvg.E, DFGulEl FPreeqrfuoermncaynBcea:nVdD(D86=92- 889V4oMltsH, zIDaQn=d
650
921
mA,
- 960
PMoHutz=)
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
www.DataSheeEt4VUM.com2.3% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5S9101N
Rev. 4, 5/2006
MRF5S9101NR1
MRF5S9101NBR1
869 - 960 MHz, 100 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9101NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9101NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +15
427
2.44
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW
RθJC
0.41
0.47
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9101NR1 MRF5S9101NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MRF5S9101NR1 Datasheet

GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

No Preview Available !

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
1
www.DGaattaeS-hSeoeurtc4eU.Lceoamkage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
2
2.8 3.5
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
3.7
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.21
0.3
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs — 7 —
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
70
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.2 —
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, Pout = 100 W, IDQ = 700 mA, f = 960 MHz
Power Gain
Gps 16 17.5 19
Drain Efficiency
ηD 56 60 —
Input Return Loss
IRL — - 15 - 9
Pout @ 1 dB Compression Point, CW
1. Part internally input matched.
P1dB
100
110
Unit
°C
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
S
pF
pF
dB
%
dB
W
(continued)
MRF5S9101NR1 MRF5S9101NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF5S9101NR1
Description GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
Maker Freescale Semiconductor
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