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MRF5S9101NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

MRF5S9101NR1 Description

Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev.4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode .
4.

MRF5S9101NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free

MRF5S9101NR1 Applications

* with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application
* Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE App

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Datasheet Details

Part number
MRF5S9101NR1
Manufacturer
Freescale Semiconductor
File Size
574.84 KB
Datasheet
MRF5S9101NR1_FreescaleSemiconductor.pdf
Description
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

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GSM GSM EDGE LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor
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