MRF5S9101NBR1 Datasheet PDF - Freescale Semiconductor GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs Specs

MRF5S9101NBR1 - GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

This page provides the datasheet information for the MRF5S9101NBR1, a member of the MRF5S9101NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs family.

Datasheet Summary

Description

4.7 mF Chip Capacitors (2220) 10 nF 200B Chip Capacitors 33 pF 100B Chip Capacitors 22 pF 100B Chip Capacitors 10 pF 100B Chip Capacitors 8.2 pF 100B Chip Capacitors 5.6 pF 100B Chip Capacitor 4.7 pF 100B Chip Capacitor 3.9 pF 100B Chip Capacitor 220 mF, 50 V Electrolytic Capacitor, Axial 10 kW, 1/4

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200°C Capable Plastic Package.
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9101NR1 MRF5S9101NBR1 869 - 960 MHz, 100 W, 26 V GSM/GSM EDGE.

Datasheet Details

Part number	MRF5S9101NBR1
Manufacturer	Freescale Semiconductor
File Size	574.84 KB
Description	GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
Datasheet	MRF5S9101NBR1 Datasheet
Additional preview pages of the MRF5S9101NBR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 18 dB Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc www.DataSheet4U.com EVM — 2.

Published: May 31, 2010 |