MRF5S9101NR1
MRF5S9101NR1 is GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF5S9101N Rev. 4, 5/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application
- Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869
- 894 MHz and 921
- 960 MHz) Power Gain
- 17.5 dB Drain Efficiency
- 60% GSM EDGE Application
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869
- 894 MHz and 921
- 960 MHz) Power Gain
- 18 dB Spectral Regrowth...
