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MRF5S9101NR1 - GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

General Description

4.7 mF Chip Capacitors (2220) 10 nF 200B Chip Capacitors 33 pF 100B Chip Capacitors 22 pF 100B Chip Capacitors 10 pF 100B Chip Capacitors 8.2 pF 100B Chip Capacitors 5.6 pF 100B Chip Capacitor 4.7 pF 100B Chip Capacitor 3.9 pF 100B Chip Capacitor 220 mF, 50 V Electrolytic Capacitor, Axial 10 kW, 1/4

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9101NR1 MRF5S9101NBR1 869 - 960 MHz, 100 W, 26 V GSM/GSM EDGE.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S9101NBR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9100NBR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9100NR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
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MRF5S9150HSR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 18 dB Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc www.DataSheet4U.com EVM — 2.